Researchers at Oak Ridge National Laboratory grew strain-tolerant, triangular, monolayer crystals of tungsten disulfide on silicon dioxide substrates patterned with donut-shaped pillars, as shown in scanning electron microscope (bottom) and atomic force microscope (middle) image elements. The curvature of the pillars induces strain in the overlying crystals that locally alters their optoelectronic properties, as shown in bright regions of photoluminescence (top). (Credit: Christopher Rouleau/Oak Ridge National Laboratory, U.S. Dept. of Energy)

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